mmb t 540 1 pnp plasti c encapsulate transistor sot - 23 suggested solder pad layout features collector current: i cm =0.6a collector - b ase voltage: v ( br)cbo =160v operating and storage temperatures ?55 o c to 150 o c capable of 0.3 watts of power dissipation marking: 2l dimensions inches mm dim min max min max note a .110 .120 2.80 3.04 b .083 .098 2.10 2.64 c .047 .055 1.20 1.40 d .035 .041 .89 1.03 e .070 .081 1.78 2.05 f .018 .024 .45 .60 g .0005 .0039 .013 .100 h .035 .044 .89 1.12 j .003 .007 .085 .180 k .015 .020 .37 .51 electrical characteri stics @ 25 o c unless otherwise specified symbol parameter min max units off characteristics v (br)ceo col l ector - emitter breakdown voltage (i c =1 .0 m adc, i b =0) 150 --- vdc v (br)cbo collector - base breakdown voltage ( i c =100uadc, i e =0 ) 160 --- vdc v (br)ebo emitter - base breakdo wn voltage ( i e =10uadc, i c =0 ) 5.0 --- vdc i cbo collector cutoff current (v cb = 1 2 0vdc, i e =0) --- 0.1 u adc i ebo emitter cutoff current (v eb = 4 . 0vdc, i c =0) --- 0.1 u adc on characteristics h fe - 1 dc curr ent gain ( v ce =5.0vdc, i c =1.0mad c ) 80 --- --- h fe - 2 dc curr ent gain ( v ce =5.0vdc, i c =1 0mad c ) 100 200 --- h fe - 3 dc curr ent gain ( v ce =5.0vdc, i c = 5 0mad c ) 50 --- --- v ce(sat) collector - emitter saturation voltage (i c = 50 madc, i b = 5. 0 madc) --- 0 .5 vdc v be(sat) base - emitter saturation voltage (i c = 50 madc, i b =5.0 m a dc) --- 1.0 vdc small - signal characteristics f t current gain - bandwidth product (i c =10madc, v ce =5.0vdc, f= 3 0mhz) 1 00 --- mhz .079 2.000 inches mm .031 .800 .035 .900 .037 .950 .037 .950 k a b c d e f g h j revision: 3 2006/05/13
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